The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Feb. 25, 1999
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for fabricating a crown shaped, capacitor structure, in a SAC opening, featuring a silicon nitride spacer, located on the walls of a bottom portion of the SAC opening, has been developed. The process features forming a SAC opening in a thick silicon oxide layer, then repairing, or filling, seams or voids, that may be present in the thick silicon oxide layer, at the perimeter of the SAC opening, via formation of a silicon nitride spacer on the sides of the SAC opening. Subsequent processing features: the isotropic removal of a top portion of the silicon nitride spacer; the formation of a polysilicon storage node structure, in the SAC opening; and the recessing of a top portion of the thick silicon oxide layer, resulting in exposure of additional polysilicon storage node, surface area.