The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Jun. 26, 2000
Wen Jun Liu, Singapore, SG;
Simon Chooi, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Raymond Joy, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
An improved method for removing a photoresist mask from an etched aluminum pattern after etching the pattern in a chlorine containing plasma has been developed. The method is a five step process, in which the first step is in a microwave generated plasma containing O,and H,O; the second step is in a microwave generated plasma containing O,and N,; the third step is in a microwave generated plasma containing H,O; the fourth step is in a microwave generated plasma containing O,and N,; and the fifth step is in a microwave generated plasma containing H,O. The first step which initiates removal of photoresist while simultaneously beginning the passivation process causes residue-free removal of photoresist following etching of aluminum or aluminum-copper layers in chlorine bearing etchants.