The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Jun. 07, 1999
John W. Andrews, Wappinger Falls, NY (US);
Bao T. Hwang, Poughkeepsie, NY (US);
Howard S. Landis, Underhill, VT (US);
Shaw-Ning Mei, Poughkeepsie, NY (US);
James M. Tyler, Lagrangeville, NY (US);
Edward J. Vishnesky, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for planarizing a structure such as a shallow trench isolation region on a semiconductor substrate. A semiconductor substrate is provided having raised and lowered regions with substantially vertical and horizontal surfaces. The lowered regions may correspond to trench regions. Filler material such as non-conformal high density plasma oxide may be deposited over the horizontal surfaces to at least a thickness equal to a predetermined height so as to provide raised and lowered regions of the filler material. The raised regions of the filler material may then be selectively removed without removing the filler material in the lowered regions.