The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Sep. 25, 2000
Rajarao Jammy, Wappingers Falls, NY (US);
Johnathan E. Faltermeier, LaGrangeville, NY (US);
Keitaro Imai, Yokohama, JP;
Ryota Katsumata, Yokohama, JP;
Jean-Marc Rousseau, Auzeville-Tolosane, FR;
Viraj Y. Sardesai, Poughkeepsie, NY (US);
Joseph F. Shepard, Jr., Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550° C. to 720° C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 Å thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.