The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Feb. 11, 1999
Cheng-Hao Huang, Taipei, TW;
Ming-Shuo Yen, Taitung, TW;
Shih-Fang Chen, Sanchang, TW;
Wen-Hsiang Tang, Taipei, TW;
Pei-Hung Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
An improved seasoning process for a plasma etching chamber is described. This has been achieved by increasing the RF power to both the wafer and the walls of the chamber during seasoning. Additionally, the gas that is used is at a pressure of about 10 mTorr and has the following composition: chlorine about 90% and oxygen about 10%. By observing the optical emission spectrum during seasoning (notably lines due to the SiCl,species) it is confirmed that, under these conditions, seasoning is completed by using only a single wafer for about 100 seconds.