The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Feb. 11, 1999
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1469 ; H01L 2/14763 ;
Abstract
A method for forming a dielectric layer upon a substrate within a microelectronics fabrication. There is provided a substrate. There is then formed upon the substrate while employing a low dielectric constant spin-on material a dielectric layer which is subsequently cured at atmospheric pressure at an elevated temperature to stabilize the physical and chemical properties of the low dielectric constant dielectric layer so as to attenuate shrinkage and other changes in those physical, and chemical properties from thermal annealing at sub-atmospheric pressure due to typical further microelectronics fabrication processing steps.