The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
May. 21, 1999
Applicant:
Inventors:
Philip J. Tobin, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Rama I. Hegde, Austin, TX (US);
Bikas Maiti, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A first metal-containing material (,) is formed over a semiconductor device substrate (10). A second metal-containing material (,) is formed over the first metal containing material (,). The combination of the second metal-containing material (,) formed over the first metal-containing material (,) forms a metal stack (,). The metal stack (,) is annealed and a post-anneal stress of the metal stack (,) is less than an individual post-anneal stress of either one of the first conductive film (,) or the second conductive film (,).