The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Feb. 05, 1999
Lu-Min Liu, Hsinchu, TW;
Hsi-Chieh Chen, Taipei, TW;
Ping-Ho Lo, Hsinchu, TW;
Sheng-Hao Lin, Keelung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a shallow trench isolation is disclosed. First, a pad oxide layer and a polysilicon layer are formed on a silicon substrate. The pad oxide layer and the polysilicon layer are etched to expose parts of the substrate. Then the exposed parts of the substrate are oxidized to form an oxide layer. Next, the oxide layer is etched back to form an oxide spacer on the side wall of the polysilicon. Then, a shallow trench is formed by etching the partly exposed substrate. Next, a dielectric layer is formed to fill the shallow trench and then etched back by CMP to stop on the polysilicon layer. Finally, the pad oxide layer and the polysilicon layer are removed. As a result, oxide spacers on the side wall of the shallow trench are formed to eliminate the kink-effect.