The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Feb. 22, 1999
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The invention provides a method for forming a thin film uniform in resistivity distribution on a semiconductor substrate. The temperature of the inside wall (,) of the reaction vessel (,) of vapor phase growth equipment is controlled to below the thermal decomposition temperature of a dopant gas such as diborane, for example, to within a range of room temperature to 250° C. The region of this temperature range is defined so as to range from the upstream-side end of the semiconductor substrate (,) to at least an upstream-side {fraction (1/3 )} point of the substrate diameter along the direction of flow of the dopant gas supplied from one end of the reaction vessel (,), desirably, over the entire region just above the semiconductor substrate (,).