The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Feb. 08, 1999
ChaoChieh Tsai, Taichung, TW;
Yuan-Chen Sun, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for fabricating a narrow channel width, MOSFET device, with a reduced reverse narrow channel effect, (RNCE), has been developed. The reduction of the level of dopant depletion, from the channel region, to the interface of a shallow trench —channel region, has been achieved via use of a large angle, nitrogen ion implantation procedure, performed to exposed surfaces of a shallow trench shape, prior to insulator fill. A nitrogen rich, silicon layer, at the shallow trench —channel interface, reduces the level of boron depletion, from the channel region, to the RIE damaged region, near the shallow trench shape.