The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Dec. 20, 1999
Cheng-Yu Chu, Hsin-Chu, TW;
Te-Fu Tseng, Hsin-Chu, TW;
Chai-Der Chang, Chia-Yi, TW;
Chi-Hung Liao, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for developing a semiconductor device low resistance electrical contact is described. In this process a gate oxide layer followed by a polysilicon layer is deposited on the semiconductor substrate in proximity to the device contact area. It is subsequently patterned with photoresist and etched to produce the desired gate structure. This is followed by a deposited layer of silicon dioxide or silicon nitride (SIN) which is appropriately patterned and etched to form gate isolation spacers. Then a nominal 300 Å layer of silicon nitride (SIN) is deposited followed by a layer of tetraethyl orthosilicate (TEOS) or borophosphosilicate glass (BPSG). The contact area is defined by photolithography, and the passivation layers are etched either by a dry etch such as a RIE process, or a combination of a wet BOE process followed by a dry etch, to form the metal contact holes. Prior to sputtering the contact metal, the contact area is cleaned with a 30 second dip in a BOE solution, followed by a Hydrogen Peroxide (H,O,) dip. This H,O,cleaning step enables lower device contact resistance for the P+ contact areas.