The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2001

Filed:

Dec. 08, 1998
Applicant:
Inventors:

Donald W. Sweeney, San Ramon, CA (US);

Avijit K. Ray-Chaudhuri, Livermore, CA (US);

Assignee:

EUV LLC, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract

A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.


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