The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Feb. 24, 1998
Applicant:
Inventors:
John W. Coburn, San Jose, CA (US);
Kevin G. Donohoe, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
An etching method for forming an opening includes providing a substrate assembly having a surface and an oxide layer thereon. A patterned mask layer is provided over the oxide layer exposing a portion of the oxide layer. A plasma including one or more of C,H,F,ions and C,F,ions and further including xenon or krypton ions is used to etch the oxide layer at the exposed portion to define the opening in the oxide layer while simultaneously depositing a polymeric residue on a surface defining the opening. The etching is continued until the opening in the oxide layer is selectively etched to the surface of the substrate assembly.