The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Jan. 08, 1999
Solomon I. Beilin, San Carlos, CA (US);
William T. Chou, Cupertino, CA (US);
Michael G. Lee, San Jose, CA (US);
David Dung Ngo, San Jose, CA (US);
Michael G. Peters, Santa Clara, CA (US);
James J. Roman, Sunnyvale, CA (US);
Yasuhito Takahashi, San Jose, CA (US);
Fujitsu Limited, , JP;
Abstract
Several inventive features for increasing the yield of substrate capacitors are disclosed. The inventive features relating to selective placement of insulating layers and patches around selected areas of the capacitor's main dielectric layer. These insulating layers and defects prevent certain manufacturing processing steps from creating pin-hole defects in the main dielectric layer. The inventive features are suitable for any type of material for the main dielectric layer, and are particularly suited to anodized dielectric layers.