The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Feb. 11, 1999
Fufa Chen, Cupertino, CA (US);
Yin Lin, Mountain View, CA (US);
Jianhua Hu, Sunnyvale, CA (US);
Frederick Wu, Cupertino, CA (US);
Ming Xi, Milpitas, CA (US);
Li Wu, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi,) and ammonia (NH,). A Ti film is subject to a treatment of NH,gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl,/NH,reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.