The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Nov. 09, 1998
Applicant:
Inventors:
Hirotoshi Ise, Tokyo, JP;
Takayuki Ikushima, Tokyo, JP;
Minoru Hanazaki, Tokyo, JP;
Nobuhiro Nishizaki, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1461 ;
Abstract
Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl,and BCl,are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF,gas or a CF,gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.