Tokyo, Japan

Nobuhiro Nishizaki


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:

goldMedal1 out of 832,880 
Other
 patents

Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Nobuhiro Nishizaki: Innovator in Semiconductor Technology

Introduction

Nobuhiro Nishizaki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to etching apparatus and methods.

Latest Patents

Nishizaki holds a patent for an etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device. This invention involves two electrodes positioned in a processing container, opposing each other. Main etching processing gases, such as Cl and BCl, are introduced into the container, along with a deposition-type gas composed of at least two elements from C, H, and F, like CHF or CF gases. A plasma is generated by applying a pulse-modulated high-frequency voltage between the electrodes that hold the sample to be etched. The sample is then etched using this plasma.

Career Highlights

Throughout his career, Nishizaki has demonstrated a strong commitment to advancing semiconductor manufacturing techniques. His innovative approaches have positioned him as a key figure in the industry.

Collaborations

Nishizaki has worked alongside notable colleagues, including Hirotoshi Ise and Takayuki Ikushima, contributing to various projects and advancements in semiconductor technology.

Conclusion

Nobuhiro Nishizaki's contributions to semiconductor technology through his innovative patent highlight his expertise and dedication to the field. His work continues to influence advancements in manufacturing methods and etching processes.

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