The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Nov. 22, 1999
Fred T. Chen, San Jose, CA (US);
Wilman Tsai, Saratoga, CA (US);
Yoshihiro Tezuka, Tokyo, JP;
Steven Labovitz, Santa Clara, CA (US);
Jeff N. Farnsworth, Los Gatos, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method is described comprising depositing a layer of resist on a mask substrate having transparent and opaque layers. The resist layer is then exposed to radiation. The radiation is patterned to produce features within an active device area and a moat surrounding the active device area. The radiation is also controlled to have a differential increased incident energy in the moat area of the mask compared to the active device area. Specifically, the exposure dose applied to the moat is greater than that normally required to completely remove the resist during the developing stage. The magnitude of the additional exposure dose is empirically derived and is based upon such factors as the type of resist and the thickness of the resist.