The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2001
Filed:
Jan. 05, 2000
Applicant:
Inventors:
Hua Shen, Beacon, NY (US);
David E. Kotecki, Orono, ME (US);
Robert Laibowitz, Peekskill, NY (US);
Katherine Lynn Saenger, Ossining, NY (US);
Satish D. Athavale, Fishkill, NY (US);
Jenny Lian, Wallkill, NY (US);
Martin Gutsche, Dorfen, DE;
Yun-Yu Wang, Poughquag, NY (US);
Thomas Shaw, Peekskill, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.