The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Nov. 16, 1998
Sun-Chieh Chien, Hsinchu, TW;
Chien-Li Kuo, Hsinchu Hsien, TW;
Tzung-Han Lee, Taipei, TW;
Wei-Wu Liao, Taipei Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming a shallow trench isolation used to isolate a device is provided. A pad oxide and a mask layer are formed on a substrate and patterned. A trench is formed within the substrate under the patterned region and the trench is filled with insulator to form an insulation plug, which is a shallow trench isolation. A dielectric layer is formed on the whole substrate surface to cover the device region and the insulation plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile