The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Mar. 03, 1999
John S. Drewery, Mesa, AZ (US);
Thomas J. Licata, Mesa, AZ (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering coating material from a compound sputtering source formed of an annular ring-shaped target with a circular target at its center, increasing deposition rate and coating uniformity. Each target is separately energized to facilitate control of the distribution of material sputtered into the chamber and the uniformity of the deposited film. The sputtered material from the targets is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind an annular dielectric window in the chamber wall in the central opening of the annular target and surrounding the circular target. A Faraday type shield physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.