The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jan. 04, 1999
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for forming a polycide layer wherein the silicide layer is blanket deposited over a polysilicon layer and selectively ion implanted through a mask to form regions of a higher resistivity than the masked regions. The implanted polycide layer is then annealed by RTA and patterned to form the conductors, gate electrodes and interconnects from the low resistivity regions and resistive components of an integrated circuit from the high resistivity regions. The capability of selecting from high and low resistive regions in a single polycide layer permits the design of resistive components with smaller areas than would be permitted if the resistive components were formed of a single low resistivity layer. This extra degree of freedom permits the designer to optimize device density and device performance without compromising either. The procedure utilizes a additional masking step utilizing a block-out mask.