The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Aug. 27, 1999
Applicant:
Inventors:
Stephen P. DeOrnellas, Santa Rosa, CA (US);
Alferd Cofer, Petaluma, CA (US);
Robert C. Vail, Windsor, CA (US);
Assignee:
Tegal Corporation, Petaluma, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H05H 1/00 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H05H 1/00 ;
Abstract
A plasma etch reactor,includes a reactor chamber,with a grounded upper electrode,a lower electrode 28 which is attached to a high frequency power supply,and a low frequency power supply,and a peripheral electrode,which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets,are used to establish the magnetic field which confines the plasma developed within the reactor chamber,The plasma etch reactor,is capable of etching emerging films used with high density semiconductor devices.