The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Feb. 26, 1998
Applicant:
Inventors:
Jiro Naka, Tokyo, JP;
Naohiko Fujino, Tokyo, JP;
Noriko Hirano, Tokyo, JP;
Junji Kobayashi, Tokyo, JP;
Kazuo Kuramoto, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/02 ; B08B 3/04 ;
U.S. Cl.
CPC ...
B08B 3/02 ; B08B 3/04 ;
Abstract
A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.