The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Mar. 25, 1999
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1425 ;
Abstract
A method for forming an amorphous silicon layer over the terminals of a MOS transistor. The method includes the steps of forming a mask layer having an opening that exposes the gate polysilicon layer over the MOS transistor. Next, using the mask layer as a mask, an inactive ion implant operation is carried out such that inactive ions are implanted into the gate polysilicon layer. Thereafter, again using the mask layer as a mask, a first heavy bombarding operation is carried out, implanting ions locally. Finally, the mask layer is removed and then a second heavy bombarding operation is carried out, implanting ions globally.