The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2000
Filed:
Feb. 23, 1999
Mu-Chun Wang, Hsin-Chu Hsien, TW;
Shih-Chung Li, Taipei Hsien, TW;
Shih-Chieh Kao, Taipei Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
The present invention provides a method for preventing gate oxides on a semiconductor wafer from being damaged by electromagnetic waves or particles generated in a plasma-related process. The semiconductor wafer comprises a substrate, a plurality of gate oxides positioned separately on the substrate, a first dielectric layer positioned on the gate oxides for isolating the gate oxides, and a conducting layer positioned on the first dielectric layer having at least one testing slit with a predetermined test pattern installed above each of the gate oxides. The method first performs a predetermined plasma-related process on the surface of the semiconductor wafer. Next, an electrical test is performed to find damaged gate oxides out of the gate oxides on the substrate. Based on damages of the damaged gate oxides, the predetermined plasma-related process is adjusted to prevent gate oxides on other semiconductor wafers from being damaged in the predetermined plasma-related process.