The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Oct. 01, 1998
Applicant:
Inventors:
Hun-Jan Tao, Hsin-Chu, TW;
Yuan-Chang Huang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438535 ; 438636 ; 438689 ; 438706 ; 438717 ; 438725 ; 438729 ; 438952 ; 156643 ; 156656 ; 216 37 ; 216 42 ; 216 47 ; 216 72 ; 216 79 ;
Abstract
A method of etching polysilicon using an oxide hard mask using a three step etch process. Steps one and two are performed insitu in a high density plasma (e.g., TCP--transformer coupled plasma) oxide etcher. Step 3, the polysilicon etch is performed in a different etcher (e.g., poly RIE etcher). A multi-layered semiconductor structure 35 (FIG. 1) is formed comprising: a substrate 10, a gate oxide layer 14, a polysilicon layer 18, a hard mask layer 22, and a bottom anti-reflective coating (BARC) layer 26 and a resist layer 30.