The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Mar. 12, 1999
Kun-Jung Chuang, Peng-Hu, TW;
Shou-Yi Hsu, Hsin-Chu, TW;
Yi-Te Chen, Hsin-Chu, TW;
Hon-Hung Lui, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method is disclosed for forming a low resistance poly landing pad which is achieved by shunting the polysilicon of a landing pad with metallic conductors. A window is opened through a first dielectric layer to expose a conducting region over a semiconductor substrate. A metallic layer, deposited overall, is followed by an overall deposition of a polysilicon layer, with the layers being sufficient to fill the window completely. Metal and polysilicon outside the window is removed by chemical/mechanical polishing which also provides global planarization. Salicidation provides a silicide cover over the exposed surface of polysilicon, which was formed by the polishing. A second dielectric is deposited and an opening is formed to the landing pad. Electrical contact is made between metallization on the second dielectric layer and the salicide of the landing pad either, directly by simultaneous deposition of the metallization on the dielectric and the landing pad, or, by first forming a plug in the opening and then depositing the metallization.