The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2000
Filed:
Apr. 21, 1998
Darryl Restaino, Modena, NY (US);
Chi-Hua Yang, Yorktown, NY (US);
Hans W Poetzlberger, Munich, DE;
Tomio Katata, Yokohama, JP;
Hideaki Aochi, Fairfax, VA (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Siemens Microelectronics, Inc., Cupertino, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal interconnect layer that fills in a via hole formed by first depositing a first Al--Cu film on the sidewalls of the via hole at a low temperature and a low sputtering power and then depositing a second Al--Cu film on the first Al--Cu film at a high temperature and high sputtering power. Sputtering is performed in two steps at low and high temperatures within the same sputtering chamber. The deposition at low temperature and low sputtering power provides good coverage in the via hole, and the deposition at high temperature and high sputtering power reduces the process time.