The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
May. 21, 1999
Applicant:
Inventor:
Wei-Shiau Chen, Chin-Men Hsien, TW;
Assignees:
United Semiconductor Corp, Hsinchu, TW;
United Microelectronics Corp, Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438692 ; 216 38 ; 216 79 ; 216 88 ; 216 23 ; 438720 ; 438723 ; 438734 ;
Abstract
A method for fabricating a passivation layer. An isolation layer is formed on a metal layer over the substrate. The isolation layer on the metal layer is removed by chemical-mechanical polishing and dry etching. The planarization of the metal layer thus is obtained. A passivation layer having a certain structure and a thickness combination of different layers is formed over the substrate. The reflection rate of the metal layer is significantly enhanced.