The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2000
Filed:
Apr. 27, 1999
Kung Linliu, Hsinchu, TW;
Mai-Ru Kuo, Hsinchu, TW;
Worldwide Semiconductor Manufacturing Corp., Hsinchu, TW;
Abstract
A method for fabricating landing pads for DRAM cells is disclosed. The method comprises following steps: At first, a substrate formed with isolation regions, periphery transistor region and a defined DRAM region are patterned so that an oxide layer on the defined DRAM region are removed to expose the source/drain region nitride caps, and nitride spacers. After a polysilicon layer is formed on all resulting surfaces, a photoresist pattern is subsequently formed on the polysilicon layer of the DRAM region so that the photoresist openings over the nitride cap are formed. Next, a conformal polymer layer of about 0.1 .mu.m in thickness is formed on all resulting surfaces so that a smaller polymer opening about 0.1 .mu.m size or beyond is formed in each of the photoresist openings. Finally, using the polymer layer as a mask and the nitride cap as a stopping layer, a polymer etching and a polysilicon etching are performed so that the landing pads are generated.