The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Dec. 23, 1997
Applicant:
Inventors:
Peter K Moon, Portland, OR (US);
David T Krick, Hillsboro, OR (US);
Kerry L Spurgin, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257513 ; 438435 ; 438437 ;
Abstract
A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subject to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.