The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Oct. 14, 1999
Mu-Chun Wang, Hsinchu Hsien, TW;
Yih-Jau Chang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
United Silicon Incorporated, Hsinchu, TW;
Abstract
A method for avoiding plasma damage. In a semiconductor substrate of a first conductive type, a second conductive type well is formed. While forming the second conductive well, a high-energy dopant is doped into the semiconductor substrate. The high energy makes a depletion region between the substrate and the well have defects. A leakage path is thus formed. The leakage path can direct any charged carriers coming from plasma to avoid accumulation of the charged carriers in the well. Thus, the electrical characteristics of the well or even the quality of gate oxide formed thereon is prevented from being degraded.