The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2000
Filed:
Jan. 27, 1998
Gene Y Kohara, Fremont, CA (US);
Fusen Chen, Cupertino, CA (US);
Hyman Joseph Levinstein, Berkeley Heights, NJ (US);
Zheng Xu, Foster City, CA (US);
Peijun Ding, San Jose, CA (US);
Gongda Yao, Fremont, CA (US);
Hong Zhang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and deposition conditions of sputtering. Ionized titanium is sputtered cold, the temperature is rapidly increased by passing argon through the heated substrate support without sputtering, thereby initiating titanium silicide formation, and then the sputtering of titanium ions is continued at high temperatures to deposit titanium silicide. To deposit titanium silicide in very high aspect ratio openings, a first layer of titanium atoms is sputter deposited in conventional manner to line the sidewalls of the openings, followed by sputtering from a plasma and continuing with the above process.