The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2000

Filed:

Mar. 05, 1999
Applicant:
Inventors:

Yung-Sheng Huang, Hsin-Chu, TW;

Hung-Chang Hsieh, Hsin-Chu, TW;

Han-Chang Hsieh, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438612 ; 438613 ; 438614 ; 438617 ; 438622 ; 438637 ;
Abstract

A method is adapted to form wire interconnect pads on integrated circuit devices and includes the steps of providing a semiconductor substrate having an aluminum-copper top metal layer, and a titanium nitride layer covering the aluminum-copper top metal layer, and a photoresist coating applied to the titanium nitride layer. The photoresist coating is partially exposed and partially developed to form openings for etching an array of submicron size holes. Etching through the titanium nitride layer to the aluminum-copper layer, by way of the partially developed photoresist, forms a rough textured surface profile in the array of cavities, with diameters of less than 0.3 um, etched in the aluminum copper layer. After stripping of the photoresist and depositing a passivation film, windows are formed delineating improved bond pads for wire bonding. The textured cavities increase the surface area of the bond pads and provide improved bondability for the 0.35 and 0.3 um IC devices.


Find Patent Forward Citations

Loading…