The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2000

Filed:

Aug. 29, 1997
Applicant:
Inventors:

Jeffery W Butterbaugh, Eden Prairie, MN (US);

Herbert H Sawin, Chestnut Hill, MA (US);

Zhe Zhang, Irvine, CA (US);

Yong-Pil Han, Boston, MA (US);

Assignees:

FSI International, Inc., Chaska, MN (US);

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438477 ; 438906 ; 510175 ; 510511 ; 134 31 ; 252 794 ; 216 79 ;
Abstract

A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.


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