The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Oct. 07, 1996
Applicant:
Inventors:
Der-Yuan Wu, Taipei, TW;
Yi-Chung Sheng, Taichung, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438586 ; 438592 ; 438655 ; 438656 ; 257296 ; 257384 ; 257757 ; 257770 ;
Abstract
On a substrate with a number rows of gates are formed. After a metal silicide layer is formed above the gates, a silicon-rich layer is formed. The silicon-rich layer is either a further metal silicide layer, with a higher silicon concentration or a pure silicon layer.