The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Aug. 11, 1998
Applicant:
Inventors:
William Lu, Tai-Ping, TW;
Tsung-Yuan Hung, Tainan, TW;
Chi-Cheng Yang, Hsinchu, TW;
Ching-Hsing Hsieh, Pingtung Hsien, TW;
Assignee:
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10L / ;
U.S. Cl.
CPC ...
438637 ; 438622 ; 438627 ; 438689 ; 438704 ;
Abstract
A method for fabricating a via that uses a hard etching mask for etching the via. A photoresist layer used to pattern the hard etching mask is removed before starting the via etching. The hard etching mask includes a TiN etching mask, a silicon nitride etching mask, and a oxide/TiN etching mask. For each different etching mass, the TiN etching mask is not necessarily removed after etching; the silicon nitride etching mask is removed after etching; the oxide layer in the oxide/TiN etching mask is sacrificial layer.