The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Apr. 17, 1997
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438656 ; 438660 ; 438669 ; 438618 ; 438621 ; 438625 ; 438629 ; 438637 ;
Abstract
An improved and new method for forming a metal conductor interconnection structure on a semiconductor substrate containing DRAM devices has been developed. The method utilizes a thermal anneal in a flowing gas mixture of nitrogen and hydrogen following patterning of the metal conductor interconnection structure and results in DRAM devices having improved mean refresh time (time between refresh cycles).
Hsiao, Yung-Kuan. (2000). Method of improving refresh time in dram products (U.S. Patent No. 6077778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6077778
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile