The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Jul. 10, 1998
Applicant:
Inventors:
Ching-Hsing Hsieh, Pingtung Hsien, TW;
William Lu, Taichung, TW;
Chih-Ching Hsu, Hsinchu, TW;
Yung-Chieh Kuo, Taipei, TW;
Assignee:
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438624 ; 438626 ; 438637 ; 438672 ; 438782 ;
Abstract
A method of forming a via is provided comprising a plasma treatment at the spin-on-glass layer after forming the unlanding via. The plasma comprises hydrogen and a second gas. The mist containing in the spin-on-glass layer is damaged and removed away.