The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Mar. 04, 1998
Tsuyoshi Yamamoto, Kariya, JP;
Rajesh Kumar, Kariya, JP;
Kunihiko Hara, Nukata-gun, JP;
Yuichi Takeuchi, Obu, JP;
Kazukuni Hara, Kasugai, JP;
Masami Naito, Inazawa, JP;
Denson Corporation, Kariya, JP;
Abstract
In a silicon carbide semiconductor device such as a trench gate type power MOSFET, the film thickness and the impurity concentration of a thin film silicon carbide semiconductor layer formed on a trench side face to constitute an accumulation-type channel-forming region and enable the device to operate with a low gate voltage, low on-resistance and low power loss are set so that on impression of a reverse bias voltage a pn junction between a P-type epitaxial layer and an n.sup.- -type epitaxial layer undergoes avalanche breakdown before the thin film silicon carbide semiconductor layer undergoes punch-through. By this means it is possible to obtain a target high source-drain withstand voltage.