The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Aug. 01, 1997
Jyoti Kiron Bhardwaj, Bristol, GB;
Huma Ashraf, Newport, GB;
Babak Khamsehpour, Coventry, GB;
Janet Hopkins, Crickhowell, GB;
Alan Michael Hynes, Cardiff, GB;
Martin Edward Ryan, Crickhowell, GB;
David Mark Haynes, Risca, GB;
Surface Technology Systems Limited, Gwent, GB;
Abstract
This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.