The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
May. 04, 1998
Chung-Shi Liu, Hsinchu, TW;
Chen-Hua Douglas Yu, Hsinchu, TW;
Jane-Bai Lai, Hsinchu, TW;
Lih-Juann Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-chu, TW;
Abstract
A method for fabricating a copper interconnect structure, using a Cu.sub.3 Ge intermetallic layer, as an adhesive layer, has been developed. Following the deposition of a copper seed layer, an ion implantation procedure is performed, placing germanium ions in a copper seed layer. After deposition of a thick copper layer, an anneal cycle, performed before or after deposition of the thick copper layer, is used to create a Cu.sub.3 Ge intermetallic layer at the interface between a copper seed layer and a titanium nitride barrier layer. A second embodiment of this invention uses a tilted, germanium ion implantation procedure, used to avoid the placement of germanium ions in a copper seed layer, at the bottom of a contact hole, thus avoiding possible implantation damage, to active device regions, exposed in the bottom of the contact hole.