The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Dec. 06, 1996
Applicant:
Inventors:
Kenichi Goto, Kawasaki, JP;
Masataka Kase, Kawasaki, JP;
Jiro Matsuo, Kyoto, JP;
Isao Yamada, Kyoto, JP;
Daisuke Takeuchi, Kyoto, JP;
Noriaki Toyoda, Kyoto, JP;
Norihiro Shimada, Kyoto, JP;
Assignees:
Fujitsu Limited, Kawasaki, JP;
Japan Science and Technology Corporation, Saitama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427530 ; 427527 ; 438515 ; 438918 ;
Abstract
A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.