The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Nov. 24, 1997
Shinji Saito, Yokohama, JP;
Masaaki Onomura, Kawasaki, JP;
Yukie Nishikawa, Narashino, JP;
Masayuki Ishikawa, Yokohama, JP;
Peter James Parbrook, Sheffield, GB;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.