The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Feb. 12, 1998
Applicant:
Inventors:
Tzong-Sheng Chang, Chang-Hua, TW;
Chen-Cheng Chou, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438238 ; 438241 ; 438257 ;
Abstract
A process has been developed in which a capacitor structure can be simultaneously fabricated with NFET and PFET devices, to be used in EEPROM, SRAM or DRAM cells. The process features the use of a silicon nitride layer, protecting an underlying capacitor dielectric layer from an oxidation ambient, presented during a subsequent NFET source and drain drive-in procedure.
Chang, Tzong-Sheng. (1999). Fabrication process for mosfet devices and a reproducible capacitor (U.S. Patent No. 6004841). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6004841
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile