The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Jan. 29, 1998
Chih-Chiang Tu, Tauyen, TW;
Jon-Yiew Gan, Chushan, TW;
Tai-Bor Wu, Hsinchu, TW;
Chao-Chen Cheng, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is either TiO.sub.2 or Ta.sub.2 O.sub.5. The first and second materials are combined to produce composites of either (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and either TiO.sub.2 or Ta.sub.2 O.sub.5 uses rf-magnetron sputtering to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x films on a transparent quartz substrate.