The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 1999

Filed:

Jul. 06, 1998
Applicant:
Inventors:

Chia-Ta Hsieh, Tainan, TW;

Hung-Cheng Sung, Hsin-Chu, TW;

Yai-Fen Lin, Taichung, TW;

Chuang-Ke Yeh, Hsin-Chu, TW;

Di-Son Kuo, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438593 ; 438266 ; 438264 ;
Abstract

A method is provided for forming a split-gate flash memory cell having a sharp beak of poly which substantially improves the programming erase speed of the cell. The sharp beak is formed through an extra and judicious wet etch of the polyoxide formed after the oxidation of the first polysilicon layer. The extra oxide dip causes the polyoxide to be removed peripherally thus forming a re-entrant cavity along the edge of the floating gate. The re-entrant beak is such that it does not get damaged during the subsequent process steps and is especially suited for cell sizes smaller than 0.35 micrometers.


Find Patent Forward Citations

Hsieh, Chia-Ta. (1999). Method of forming sharp beak of poly to improve erase speed in (U.S. Patent No. 5970371). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5970371

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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