The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Sep. 22, 1997
Applicant:
Inventors:
Shosuke Endoh, Nirasaki, JP;
Masaaki Mitsuno, Chigasaki, JP;
Assignees:
Tokyo Electron Limited, Tokyo, JP;
Tokai Carbon Co., Ltd, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
445 49 ; 156345 ; 20429831 ; 20429833 ;
Abstract
A method manufactures an electrode plate for a plasma processing device in which a semiconductor wafer is processed to form a highly integrated circuit. The method includes a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material one or two backing steps of carbonizing the heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon and a polishing step of polishing one face of the baking material, which is exposed to plasma, to a depth of 20 .mu.m to 1.25 mm.