The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Jan. 08, 1997
Mark I Gardner, Cedar Creek, TX (US);
Thomas E Spikes, Jr, Round Rock, TX (US);
Robert Paiz, Austin, TX (US);
Advanced Micro Devices, Austin, TX (US);
Abstract
In a semiconductor device fabrication process, an active region of the semiconductor device is formed by doping an active region after formation of a relatively thick oxide layer. According to the process, a gate electrode is formed on a substrate and a relatively thick oxide layer is formed over the gate electrode. Portions of the relatively thick oxide layer are removed to expose a region of the substrate adjacent the gate electrode. The exposed region is then doped with a dopant to form an active region. The active region may form an LDD region. The relatively thick oxide layer may comprise a contact formation layer.